Pressure sensor having gold-silicon eutectic crystal layer...

Details Pressure sensor having gold-silicon eutectic crystal layer... Pressure sensor having gold-silicon eutectic crystal layer...

2007-03-01

2008-12-09

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S415000, C257S414000, C257SE29324, C438S052000, C438S048000, C073S724000

Reexamination Certificate

active

07462918

ABSTRACT:
A pressure sensor includes a gold-silicon eutectic crystal layer interposed between the contact layer and the silicon substrate. Because the contact layer and the silicon substrate are electrically connected to each other by using a gold-silicon eutectic reaction at the time of bonding the silicon substrate and the glass substrate, a contact resistance between the contact layer and the silicon substrate can be stabilized, and a Q value of the sensor can be stabilized. In addition, since the contact layer and the silicon substrate are bonded to each other by the gold-silicon eutectic reaction, the bonding strength is sufficient.

REFERENCES:
patent: 4314225 (1982-02-01), Tominaga et al.
patent: 2003/0056598 (2003-03-01), Kimura et al.
patent: 8-075582 (1996-03-01), None

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