Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-08
2008-11-18
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07452796
ABSTRACT:
An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).
REFERENCES:
patent: 6486529 (2002-11-01), Chi et al.
patent: 7202152 (2007-04-01), Davies
Goltry Michael W.
Lee Calvin
Parsons Robert A.
Parsons & Goltry
LandOfFree
Semi-conductor device with inductive component and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semi-conductor device with inductive component and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semi-conductor device with inductive component and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4033007