Reading phase change memories to reduce read disturbs

Details Reading phase change memories to reduce read disturbs Reading phase change memories to reduce read disturbs

2007-07-11

2008-12-30

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

Reexamination Certificate

active

07471557

ABSTRACT:
Read disturbs in phase change memories may be reduced by progressively reducing the read pulse falling edges. This may reduce the possibility of quenching and inadvertent amorphization of at least a portion of the bit. As a result, in some embodiments, read disturbs may be reduced.

REFERENCES:
patent: 6750469 (2004-06-01), Ichihara et al.
patent: 6768665 (2004-07-01), Parkinson et al.
patent: 2006/0227592 (2006-10-01), Parkinson et al.

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