Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-16
2008-11-04
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
07446362
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.
REFERENCES:
patent: 5767541 (1998-06-01), Hanagasaki
patent: 6570203 (2003-05-01), Hikosaka et al.
patent: 6611015 (2003-08-01), Ozaki et al.
patent: 6972449 (2005-12-01), Yoshikawa et al.
patent: 2004-349424 (2004-12-01), None
Hidaka Osamu
Kanaya Hiroyuki
Kunishima Iwao
Doan Theresa T
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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