Semiconductor device having cell transistor with recess...

Details Semiconductor device having cell transistor with recess... Semiconductor device having cell transistor with recess...

2006-05-24

2008-11-25

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S332000, C257SE27091, C257SE29152, C257SE29187, C257SE21428

Reexamination Certificate

active

07456469

ABSTRACT:
The present invention provides a semiconductor device comprising: a dual-gate peripheral transistor having a transistor structure of surface channel nMOSFET and a transistor structure of surface channel pMOSFET; and a cell transistor having an nMOSFET structure with a recess channel structure, a gate electrode of the cell transistor having an N-type polysilicon layer which contains of N-type impurities at an approximately constant concentration.

REFERENCES:
patent: 6844578 (2005-01-01), Harada et al.
patent: 11-307729 (1999-11-01), None
patent: 2002-359294 (2002-12-01), None

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