Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-16
2008-12-02
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21209
Reexamination Certificate
active
07459748
ABSTRACT:
A semiconductor memory device includes: a semiconductor substrate; a semiconductor layer formed on the semiconductor substrate with an insulating film interposed therebetween, the semiconductor layer being in contact with the semiconductor substrate via an opening formed in the insulating film; and a NAND cell unit formed on the semiconductor layer with a plurality of electrically rewritable and non-volatile memory cells connected in series and first and second select gate transistors disposed at both ends thereof.
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Aoki Nobutoshi
Arai Fumitaka
Enda Toshiyuki
Kusunoki Naoki
Miyano Kiyotaka
Kabushiki Kaisha Toshiba
Le Thao P.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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