Semiconductor memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE21209

Reexamination Certificate

active

07459748

ABSTRACT:
A semiconductor memory device includes: a semiconductor substrate; a semiconductor layer formed on the semiconductor substrate with an insulating film interposed therebetween, the semiconductor layer being in contact with the semiconductor substrate via an opening formed in the insulating film; and a NAND cell unit formed on the semiconductor layer with a plurality of electrically rewritable and non-volatile memory cells connected in series and first and second select gate transistors disposed at both ends thereof.

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