Integrated circuits and SRAM memory cells

Details Integrated circuits and SRAM memory cells Integrated circuits and SRAM memory cells

1997-10-30

1999-05-25

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257381, 257536, 257537, 257538, 257904, H01L 2711

Patent

active

059071761

ABSTRACT:
The invention encompasses integrated circuits and SRAM cells. In one aspect, the invention includes an integrated circuit comprising: a) an electrically insulative pillar extending substantially vertically outward of an underlying layer, the pillar having opposing substantially vertical side surfaces and a top, the pillar being taller than it is wide; b) a resistor comprising a layer of material which extends along both pillar vertical surfaces and over the top of the pillar; c) a first node in electrical connection with the resistor on one side of the insulative pillar; and d) a second node in electrical connection with the resistor on the other side of the insulative pillar.

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Antipov, "Sidewall Resistors Fabricated in a Dielectric Isolation Process", IBM Technical Disclosure Bulletin, vol. 19, No. 7, Dec. 1976, pp. 2525-2526.

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