Method for purifying a metal carbonyl precursor

Details Method for purifying a metal carbonyl precursor Method for purifying a metal carbonyl precursor

2005-09-28

2008-12-02

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C427S252000

Reexamination Certificate

active

07459395

ABSTRACT:
A method of purifying a metal carbonyl precursor in a metal precursor vaporization system where the metal carbonyl precursor comprises a metal particulate impurity. The method includes flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to separate the metal carbonyl precursor from the metal particulate impurity and to transfer the metal carbonyl precursor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system, where an amount of the metal particulate impurity is lower in the precursor collection system than in the precursor vaporization system and the precursor collection system is maintained at a lower temperature than the metal precursor vaporization system. A metal carbonyl precursor parameter may be monitored to determine a status of the metal carbonyl precursor and the need for purifying the metal carbonyl precursor.

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European Patent Office, International Search Report and Written Opinion of corresponding PCT Application No. PCT/US2006/007675, dated Oct. 13, 2006, 9 pages.

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