Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-11-16

2008-12-16

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S191000, C257S192000

Reexamination Certificate

active

07465968

ABSTRACT:
A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.

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Hikita et al., “350V/150A A1GaN/GaN power HFET on Silicon substrate with source-via grounding (SVG) structure”, IEDM Tech. Digest, 2004, p. 803, IEEE.
Camarchia, et al., “Physics-Based Modeling of Submicron GaN Permeable Base Transistors”, IEEE Electron Device Letters, Jun. 2002, pp. 303-305, vol. 23, No. 6, IEEE.

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