Semiconductor device and fabrication process thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Reexamination Certificate

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Details

C257S684000, C257S782000, C257S701000

Reexamination Certificate

active

07466030

ABSTRACT:
The semiconductor device uses an insulating resin that contains at least a resin anti-repellent for adjusting wettability of the insulating resin. The insulating resin is applied on a circuit board, and a semiconductor element is placed thereon and pressed against it. The applied pressure pushes out a portion of the insulating resin under the semiconductor element. This portion of the insulating resin combines with a portion of the insulating resin around the semiconductor element to form a resin fillet on the side surfaces of the semiconductor element.

REFERENCES:
patent: 5656862 (1997-08-01), Papathomas et al.
patent: 5710071 (1998-01-01), Beddingfield et al.
patent: 5953814 (1999-09-01), Sozansky et al.
patent: 6083774 (2000-07-01), Shiobara et al.
patent: 6542374 (2003-04-01), Muramatsu et al.
patent: 2002/0043713 (2002-04-01), Seko
patent: 2002/0142167 (2002-10-01), Yamaguchi et al.
patent: 7180/1990 (1990-02-01), None
patent: 77227/1995 (1995-08-01), None
patent: 09-064103 (1997-03-01), None
patent: 2002-124544 (2002-04-01), None
patent: 2002-244580 (2002-08-01), None
patent: 2002-270652 (2002-09-01), None
patent: 2004-075835 (2004-03-01), None
Korean Office Action mailed Sep. 21, 2005 (w/English translation thereof).
KR 2002-0063513 dated Aug. 3, 2002 (U.S. counterpart US 2002/0142167 listed above).

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