Polysilazane perhydride solution and method of manufacturing...

Details Polysilazane perhydride solution and method of manufacturing... Polysilazane perhydride solution and method of manufacturing...

2005-07-07

2008-08-05

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S296000

Reexamination Certificate

active

07407864

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.

REFERENCES:
patent: 6057580 (2000-05-01), Watanabe et al.
patent: 6191002 (2001-02-01), Koyanagi
patent: 2004/0266131 (2004-12-01), Kawasaki et al.
patent: 3479648 (2003-10-01), None

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