Method of manufacturing semiconductor device, and...

Details Method of manufacturing semiconductor device, and... Method of manufacturing semiconductor device, and...

2005-11-22

2008-08-26

Nguyen, Ha (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S648000, C438S650000, C257S774000, C257SE21332

Reexamination Certificate

active

07416974

ABSTRACT:
A method of manufacturing a semiconductor device, comprising a first step of forming a layer insulation film on a lower layer wiring provided on a substrate and forming a connection hole in the layer insulation film, a second step of forming an alloy layer composed of a first metallic material constituting the lower layer wiring and a second metallic material different from the first metallic material, on the surface side of the lower layer wiring in the region to be a bottom portion of the connection hole, a third step of sputter-etching the alloy layer, and a fourth step of forming a via in the connection hole in the state of reaching the lower layer wiring; and the semiconductor device.

REFERENCES:
patent: 6294461 (2001-09-01), Thakur
patent: 6555465 (2003-04-01), Yamaha

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