Method for forming an aluminum contact

Details Method for forming an aluminum contact Method for forming an aluminum contact

2005-12-29

2008-08-05

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S659000, C438S663000, C438S675000, C438S668000, C257SE21586

Reexamination Certificate

active

07407884

ABSTRACT:
A method of forming an aluminum contact including forming a barrier metal layer on an interlayer insulation layer pattern defining a contact hole, and forming an aluminum layer on the barrier metal layer so as to fill the contact hole. The method further includes forming a photoresist pattern for ion implantation, implanting ions into the aluminum layer, and annealing by using a rapid thermal process.

REFERENCES:
patent: 5098884 (1992-03-01), Yamazaki
patent: 5300462 (1994-04-01), Kakumu
patent: 5654239 (1997-08-01), Sakamoto
patent: 5665995 (1997-09-01), Hsue et al.
patent: 5880023 (1999-03-01), Jun
patent: 6426289 (2002-07-01), Farrar
patent: 6500749 (2002-12-01), Liu et al.

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