Method of manufacturing a non-volatile memory device

Details Method of manufacturing a non-volatile memory device Method of manufacturing a non-volatile memory device

2005-08-15

2008-08-19

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S317000

Reexamination Certificate

active

07414282

ABSTRACT:
A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.

REFERENCES:
patent: 4652897 (1987-03-01), Okuyama et al.
patent: 5100819 (1992-03-01), Gill et al.
patent: 5674764 (1997-10-01), Liu et al.
patent: 5898614 (1999-04-01), Takeuchi
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6501124 (2002-12-01), Kim
patent: 6630384 (2003-10-01), Sun et al.
patent: 6727128 (2004-04-01), Sridevan
patent: 6771545 (2004-08-01), Hsia et al.
patent: 2003/0155599 (2003-08-01), Hsu et al.
patent: 2004/0051134 (2004-03-01), Jang et al.
patent: 2004/0084718 (2004-05-01), Hung et al.
patent: 2004/0100822 (2004-05-01), Roizin et al.
patent: 2004/0219802 (2004-11-01), Park et al.
patent: 2005/0012159 (2005-01-01), Sekimoto
patent: 2006/0197139 (2006-09-01), Wu et al.
patent: 2007/0059945 (2007-03-01), Mohklesi
R. Shirota et al., “ An Accurate Model of Subbreakdown Due to Band-To-Band Tunneling and its Application,” IEDM, Dec. 1988, pp. 26-29.
T. Ohnakado et al., “Novel Electron Injection Method Using Band-toBand Tunneling Induced Hot Electron (BBHE) for Flash Memory with a P-channel Cell,” IEDM, Dec. 1995, pp. 279-282.

Affiliated with

Also associated with

Rating

Method of manufacturing a non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a non-volatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4018475