Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2007-09-26
2008-08-19
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257SE27026, C257SE27073
Reexamination Certificate
active
07414274
ABSTRACT:
The present invention relates to use of selective oxidation to oxidize silicon in the presence of tungsten and/or tungsten nitride in memory cells and memory arrays. This technique is especially useful in monolithic three dimensional memory arrays. In one aspect of the invention, the silicon of a diode-antifuse memory cell is selectively oxidized to repair etch damage and reduce leakage, while exposed tungsten of adjacent conductors and tungsten nitride of a barrier layer are not oxidized. In some embodiments, selective oxidation may be useful for gap fill. In another aspect of the invention, TFT arrays made up of charge storage memory cells comprising a polysilicon/tungsten nitride/tungsten gate can be subjected to selective oxidation to passivate the gate polysilicon and reduce leakage.
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Dang Trung
SanDisk 3D LLP
Vierra Magen Marcus & DeNiro LLP
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