Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-06-10
2008-08-19
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S166000, C438S489000, C257SE21133, C257SE21572, C257SE21632
Reexamination Certificate
active
07413939
ABSTRACT:
A method of fabricating a silicon-germanium CMOS includes preparing a silicon substrate wafer; depositing an insulating layer on the silicon substrate wafer; patterning and etching the insulating layer; depositing a layer of polycrystalline germanium on the insulating layer and on at least a portion of the silicon substrate wafer; patterning and etching the polycrystalline germanium; encapsulating the polycrystalline germanium with an insulating material; rapidly thermally annealing the wafer at a temperature sufficient to melt the polycrystalline germanium; cooling the wafer to promote liquid phase epitaxy of the polycrystalline germanium, thereby forming a single crystal germanium layer; and completing the CMOS device.
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Hsu Sheng Teng
Lee Jong-Jan
Maa Jer-Shen
Tweet Douglas J.
Isaac Stanetta
Lebentritt Michael
Sharp Laboratories of America Inc.
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