Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-07-08

2008-08-05

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S683000, C257SE21201

Reexamination Certificate

active

07407881

ABSTRACT:
Enhanced step coverage and reduced resistivity of a TaSiN layer may be achieved when a semiconductor device is manufactured by: forming an interlayer insulating layer on a semiconductor substrate, the interlayer insulating layer having a contact hole that partially exposes the substrate; depositing a TaN thin film on the interlayer insulating layer and in the contact hole using a reaction gas containing a Ta precursor and a nitrogen source gas; removing impurities from the TaN thin film; forming a TaSiN thin film by reacting the impurity-removed TaN thin film with a silicon source gas, and repeating the TaN-depositing, impurity-removing, and silicon source gas-reacting steps.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5008216 (1991-04-01), Huang et al.
patent: 5008730 (1991-04-01), Huang et al.
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5401675 (1995-03-01), Lee et al.
patent: 5403779 (1995-04-01), Joshi et al.
patent: 5760475 (1998-06-01), Cronin et al.
patent: 5889328 (1999-03-01), Joshi et al.
patent: 6052301 (2000-04-01), Ikeda et al.
patent: 6204204 (2001-03-01), Paranjpe et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6491978 (2002-12-01), Kalyanam
patent: 6743473 (2004-06-01), Parkhe et al.
patent: 6869876 (2005-03-01), Norman et al.
patent: 6936538 (2005-08-01), Byun
patent: 6995081 (2006-02-01), Vaartstra
patent: 7005372 (2006-02-01), Levy et al.
patent: 2003/0059980 (2003-03-01), Chen et al.
patent: 2005/0009325 (2005-01-01), Chung et al.
patent: 2005/0054196 (2005-03-01), Wu et al.
patent: 2000-0005622 (2000-01-01), None
patent: 2002-0016312 (2002-03-01), None
patent: 20030002034 (2003-01-01), None
patent: 20030003331 (2003-01-01), None
Lee, Sook Joo, Method for Forming Copper Wiring of Semiconductor Device, English Abstract of Korean Patent Abstract 1020030003331 A, Jan. 10, 2003, Korean Intellectual Property Office, Republic of Korea.
Yoon, Dong Su, Method for Forming Diffusion Barrier Layer of Tomary System of Copper Wire, English Abstract of Korean Patent Abstract 1020030002034 A, Jan. 8, 2003, Korean Intellectual Property Office, Republic of Korea.
Jang Ung Eom and Yong Su Kim: Method for Forming Tungsten Gate; Korean Patent Abstract: Publication No. 1020020016312 A; Publication Date: Mar. 4, 2002; Korean Intellectual Property Office, Republic of Korea.
Kawabataguninori, Takitamatato and Yikadadosimi: Semiconductor Memory Device; Korean Patent Abstract; Publication No. 1020000005622 A: Publication Date: Jan. 25, 2000; Korean Intellectual Property Office, Republic of Korea.

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