Lateral high-voltage transistor with vertically-extended...

Details Lateral high-voltage transistor with vertically-extended... Lateral high-voltage transistor with vertically-extended...

2005-11-09

2008-08-12

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S343000

Reexamination Certificate

active

07411249

ABSTRACT:
A lateral high-voltage device in which conductive trench plates are inserted across the voltage-withstand region, so that, in the on state, the current density vectors have less convergence. This can help reduce on-resistance.

REFERENCES:
patent: 6534823 (2003-03-01), Hueting et al.
patent: 2004/0232486 (2004-11-01), Disney et al.

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