Fabrication of self-aligned gallium arsenide MOSFETs using...

Details Fabrication of self-aligned gallium arsenide MOSFETs using... Fabrication of self-aligned gallium arsenide MOSFETs using...

2007-03-29

2008-10-14

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S303000, C438S306000, C438S039000, C438S508000

Reexamination Certificate

active

07435636

ABSTRACT:
A method for fabricating a gallium arsenide MOSFET device is presented. A dummy gate is formed over a gallium arsenide substrate. Source-drain extensions are implanted into the substrate adjacent the dummy gate. Dummy spacers are formed along dummy gate sidewalls and over a portion of the source-drain extensions. Source-drain regions are implanted. Insulating spacers are formed on dummy oxide spacer sidewalls. A conductive layer is formed over the source-drain regions. The conductive layer is annealed to form contacts to the source-drain regions. The dummy gate and the dummy oxide spacers are removed to form a gate opening. A passivation layer is in-situ deposited in the gate opening. The surface of the passivation layer is oxidized to create an oxide layer. A dielectric layer is ex-situ deposited over the oxide layer. A gate metal is deposited over the dielectric layer to form a gate stack in the gate opening.

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