Epitaxial growth method

Details Epitaxial growth method Epitaxial growth method

2006-01-18

2008-10-14

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S481000, C257SE21090

Reexamination Certificate

active

07435666

ABSTRACT:
Provided is an epitaxial growth method for forming a high-quality crystalline growth semiconductor wafer. The method includes forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming a plurality of holes in the mask layer using a laser to expose portions of the buffer layer; forming wells having a predetermined depth in the exposed portions of the buffer layer by injecting an etchant into the holes; removing the mask layer and annealing the buffer layer to form a porous buffer layer having cavities obtained by the wells; and forming a crystalline material layer on the porous buffer layer using an epitaxial growth process.

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Korean Office Action (with English translation) dated Mar. 29, 2006.

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