Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-04-25
2008-08-12
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S166000, C438S197000, C438S795000, C438S798000, C257S347000, C257S057000, C257SE21134, C257SE21212, C257SE21414
Reexamination Certificate
active
07410839
ABSTRACT:
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes high-speed operation and high-performance of the semiconductor device and a manufacturing method thereof. Further in addition, it is an object of the present invention to provide a manufacturing method in which a manufacturing process is simplified. The semiconductor device of the present invention has an island-shaped semiconductor film formed over a substrate having an insulating surface and a gate electrode formed over the island-shaped semiconductor film, in which the gate electrode is oxidized its surface by high-density plasma to be slimmed and the substantial length of a channel is shortened.
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The Advancing Introduction of Plasma Oxynitriding Apparatus Adopted by More Than 10 LSI Makers, Nikkei Microdevices, Apr. 2005, pp. 100-103.
Isobe Atsuo
Yamazaki Shunpei
Ahmadi Mohsen
Lebentritt Michael S.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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