Predictions of leakage modes in integrated circuits

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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Reexamination Certificate

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07439084

ABSTRACT:
A method for determining leakage currents in integrated circuits is provided. The method includes providing a substrate comprising a target structure having a first region and a second region, grounding the second region, scanning the substrate using a scanning electron microscope to produce a voltage contrast (VC) image, determining a gray level of the first region in the VC image, and using the gray level to determine a leakage current between the first region and the second region.

REFERENCES:
patent: 6365423 (2002-04-01), Heinlein et al.
patent: 6815345 (2004-11-01), Zhao et al.

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