Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2004-11-16

2008-08-26

Sarkar, Asok K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257SE23110

Reexamination Certificate

active

07417311

ABSTRACT:
A semiconductor wafer is thinned to a predetermined thickness by grinding the backside thereof (which is opposite to the side where a plurality of devices are formed and metal posts are further formed), and then a metal layer made of metal having a linear thermal expansion coefficient close to that of the semiconductor wafer is formed on the ground side. Further, the semiconductor wafer is sealed with resin, metal bumps are bonded to the tops of the metal posts (barrier metal layer), and then the semiconductor wafer is divided into the respective semiconductor devices. Silicon is used as material for the semiconductor wafer, and tungsten or molybdenum is used as metal constituting the metal layer.

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Japanese Office Action mailed Nov. 14, 2006, 2 pages (1 page partial English translation).
Chinese Office Action, May 11, 2007, Patent Application No. 200410096017.8.

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