Reactor with heated and textured electrodes and surfaces

Details Reactor with heated and textured electrodes and surfaces Reactor with heated and textured electrodes and surfaces

2001-06-22

2008-10-21

Alejandro, Luz L. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C216S067000, C216S071000, C216S075000

Reexamination Certificate

active

07439188

ABSTRACT:
A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flaking and/or delaminating of such materials which can interfere with semiconductor wafer processing.

REFERENCES:
patent: 3514391 (1970-05-01), Hablanian et al.
patent: 4033287 (1977-07-01), Alexander, Jr. et al.
patent: 4208241 (1980-06-01), Harshbarger et al.
patent: 4457359 (1984-07-01), Holden
patent: 4508161 (1985-04-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4535834 (1985-08-01), Turner
patent: 4542298 (1985-09-01), Holden
patent: 4680061 (1987-07-01), Lamont, Jr.
patent: 4743570 (1988-05-01), Lamont, Jr.
patent: 5031571 (1991-07-01), Igarashi et al.
patent: 5272417 (1993-12-01), Ohmi
patent: 5277751 (1994-01-01), Ogle
patent: 5362350 (1994-11-01), Yanagida
patent: 5445709 (1995-08-01), Kojima et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5628869 (1997-05-01), Mallon
patent: 5661093 (1997-08-01), Ravi
patent: 5708557 (1998-01-01), Feigenbaum et al.
patent: 5753566 (1998-05-01), Hwang
patent: 5800618 (1998-09-01), Niori et al.
patent: 5800619 (1998-09-01), Holland et al.
patent: 5804046 (1998-09-01), Sawada et al.
patent: 5814154 (1998-09-01), Boitnott
patent: 5820947 (1998-10-01), Itoh
patent: 5833752 (1998-11-01), Martin
patent: 5837057 (1998-11-01), Koyama et al.
patent: 5874704 (1999-02-01), Gates
patent: 5876504 (1999-03-01), Fuji et al.
patent: 5904487 (1999-05-01), Conboy et al.
patent: 6001432 (1999-12-01), Yamazaki et al.
patent: 6007673 (1999-12-01), Kugo et al.
patent: 6046116 (2000-04-01), DeOrnellas et al.
patent: 6070550 (2000-06-01), Ravi
patent: 6071573 (2000-06-01), Koemtzopoulos et al.
patent: 6214740 (2001-04-01), Imai et al.
patent: 07130712 (1995-05-01), None
patent: WO 97/27622 (1997-07-01), None
patent: WO 99/25568 (1999-05-01), None
Ohno et al.,Reactive Ion Etching of Cooper Films in SiCl4and N2Mixture, Japanese Journal of Applied Physics, vol. 28, No. 6, Jun. 1978, pp. 11070-11072.
Krogh et al.,Spectroscopic Dianostics of Temperature-Controlled Trench Etching of Silicon, Plasma Chemistry Plasma Processes, 10(2), 1990, pp. 231-233, 239.
PCT Notification of Transmittal of the International Search Report or the Declaration for PCT/US98/23297, Int'l Filing Date Nov. 3, 1998, mailed Feb. 28, 2000.
Alan R. Reinberg,Plasma Etch Equipment Technology, M. Triodes, Perkin-Elmer Corporation, Norwalk, Connecticut, © 1989 by Academic Press, Inc., ISBN 0-12-469370-p; pp. 350-351.
Plasma Etching Technology, Feb. 10-11, 1997, Burlingame, California, Continuing Education in Engineering, University Extension, U. of California, Berkeley,Plasma Etching Technology An Overview, D.L. Flamm, 1992-1996, title 95011501 v2, D.L. Flamm 1995, src5012608, 3 pgs.

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