Testable electrostatic discharge protection circuits

Details Testable electrostatic discharge protection circuits Testable electrostatic discharge protection circuits

2005-05-05

2008-10-07

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000, C257S174000, C257S360000, C257S363000, C257S673000, C257S780000, C257S379000, C257S516000, C257S528000, C257S551000, C257S904000

Reexamination Certificate

active

07432555

ABSTRACT:
A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding pads together, the ESD protection circuitry and/or the MOSFET can be separately tested. A voltage higher than functioning ESD protection circuitry would permit can be used when testing the MOSFET. A packaging process such as wire bonding or attaching the die to a substrate in a flip-chip package can connect the bonding pads after testing.

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