Semiconductor mechanical sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Details

C438S048000, C438S050000, C257SE21613

Reexamination Certificate

active

07407827

ABSTRACT:
A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate1, a recess portion2is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion2facing the same, an electrode5is formed. An alternating current electric power is applied between the weight portion4and the electrode5so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode6is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

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