Filling narrow and high aspect ratio openings using...

Details Filling narrow and high aspect ratio openings using... Filling narrow and high aspect ratio openings using...

2005-12-15

2008-10-07

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S700000, C438S680000, C257SE21170, C257SE21174, C257SE21229, C257SE21304, C257SE21577

Reexamination Certificate

active

07432200

ABSTRACT:
Methods of fabricating an interconnect utilizing an electroless deposition technique, which fundamentally consists of providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, and electrolessly depositing a conductive material within the opening. Various processing steps and structures may be utilized in the fabrication of the interconnect, which may include but is not limited to forming barrier layers, utilizing seed materials, utilizing activation materials, and treating the dielectric material to be receptive to electroless deposition.

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Valery M. Dubin et al., “Method to Fabricate Copper-Cobalt Interconnects”, U.S. Appl. No. 10/943,610, filed Sep. 17, 2004, 28 pages.

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