Method for forming metal wiring of semiconductor devices

Details Method for forming metal wiring of semiconductor devices Method for forming metal wiring of semiconductor devices

1997-05-20

1999-06-15

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419217, 20419225, 438622, 438648, 438656, C23C 1434, H01L 21203

Patent

active

059118571

ABSTRACT:
A method for forming a metal wiring of a semiconductor device, which is capable of requiring no additional thermal process, so that the number of processing steps is reduced, thereby reducing the manufacturing costs and improving the productivity of the semiconductor device. The method includes the steps of providing a semiconductor substrate, forming an interlayer insulating film provided with a contact hole on the semiconductor substrate, forming a first titanium film over the resulting structure obtained after the formation of the interlayer insulating film, forming a multilayer, which consists of a first titanium nitride film, a titanium oxide film and a second nitride film, over the first titanium film, forming a second titanium film over the second titanium nitride film, and forming a metal wiring on the second titanium film.

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