Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-08
2008-10-28
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257SE29300
Reexamination Certificate
active
07442986
ABSTRACT:
In a split gate type nonvolatile memory cell in which a MOS transistor for a nonvolatile memory using a charge storing film and a MOS transistor for selecting it are adjacently formed, the charge storing characteristic is improved and the resistance of the gate electrode is reduced. In order to prevent the thickness reduction at the corner portion of the charge storing film and improve the charge storing characteristic, a taper is formed on the sidewall of the select gate electrode. Also, in order to stably perform a silicide process for reducing the resistance of the self-aligned gate electrode, the sidewall of the select gate electrode is recessed. Alternatively, a discontinuity is formed between the upper portion of the self-aligned gate electrode and the upper portion of the select gate electrode.
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Hisamoto Digh
Kimura Shin'ichiro
Yasui Kan
Miles & Stockbridge P.C.
Renesas Technology Corp.
Thomas Toniae M.
Wilczewski M.
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