Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-10
2008-08-12
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C977S936000, C977S932000, C977S933000
Reexamination Certificate
active
07411235
ABSTRACT:
A spin transistor includes a first conductive layer that is made of a ferromagnetic material magnetized in a first direction, and functions as one of a source and a drain; a second conductive layer that is made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction, and functions as the other one of the source and the drain. The spin transistor also includes a channel region that is located between the first conductive layer and the second conductive layer, and introduces electron spin between the first conductive layer and the second conductive layer; a gate electrode that is located above the channel region; and a tunnel barrier film that is located between the channel region and at least one of the first conductive layer and the second conductive layer.
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Saito Yoshiaki
Sugiyama Hideyuki
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Patton Paul E
Smith Zandra
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