Formation of semiconductor devices to achieve...

Details Formation of semiconductor devices to achieve... Formation of semiconductor devices to achieve...

2004-06-09

2008-10-07

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S401000, C257S628000

Reexamination Certificate

active

07432558

ABSTRACT:
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A fin may be formed on the insulating layer. The fin may include a side surface and a top surface, and the side surface may have a <100> orientation. A first gate may be formed on the insulating layer proximate to the side surface of the fin.

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