Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-16
2008-08-19
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S392000, C257S401000, C257S408000, C257S499000
Reexamination Certificate
active
07414292
ABSTRACT:
A semiconductor device manufacturing method includes, forming isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, forming a silicon gate electrode and a silicon resistive element, forming side wall spacers on the gate electrode, heavily doping a first active region with phosphorus and a second active region and the resistive element with p-type impurities by ion implantation, forming salicide block at 500° C. or lower, depositing a metal layer covering the salicide block, and selectively forming metal silicide layers. The method may further includes, forming a thick and a thin gate insulating films, and performing implantation of ions of a first conductivity type not penetrating the thick gate insulating film and oblique implantation of ions of the opposite conductivity type penetrating also the thick gate insulating film before the formation of side wall spacers.
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Anezaki Toru
Ema Taiji
Kojima Hedeyuki
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
Wojciechowicz Edward
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