Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-07-26
2008-08-12
Dang, Trung (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S166000, C257SE21414
Reexamination Certificate
active
07410847
ABSTRACT:
There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same. In order to achieve the object, the design of a second mask is appropriately determined in accordance with requirements associated with the circuit configuration to make it possible to form a desired LDD region on both sides or one side of the channel formation region of a TFT.
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Kuwabara Hideaki
Nakajima Setsuo
Yamazaki Shunpei
Costellia Jeffrey L.
Dang Trung
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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