Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2003-03-17
2008-09-02
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S308000, C438S487000, C257SE21134, C257SE21347
Reexamination Certificate
active
07419860
ABSTRACT:
A crystalline semiconductor having an even surface and a large crystal grain size is formed on an economical glass substrate using a laser crystallizing technology. A series of processes, including forming an insulation film on a glass substrate; forming a semiconductor film in the first layer; crystallizing the semiconductor film in the first layer by irradiating laser light stepwise from weak energy laser light to strong energy laser light; forming a semiconductor film in a second layer having a film thickness thinner than that of the semiconductor film in the first layer; performing laser crystallization of the semiconductor thin film in the second layer by irradiating laser light stepwise from weak energy laser light to strong energy laser light, are continuously performed without exposing the workpiece to the atmosphere.
REFERENCES:
patent: 5496768 (1996-03-01), Kudo
patent: 7061017 (2006-06-01), Ogata et al.
patent: 2-84716 (1990-03-01), None
patent: 7-99321 (1995-04-01), None
“High Performance Poly-Si TFTs Fabricated Using Pulsed Laser Annealing and Remote Plasma CVD with Low Temperature Processing” Kohno et al., IEEE Transactions on Electron Devices, vol. 42, No. 2, Feb. 1995, pp. 251-257.
“New Approach to Form poly-Si by Low, Wide Energy Range of Laser Irradiation” Hara et al., AM-LCD '97, pp. 59-62.
“Capillary Waves In Pulsed Excimer Laser Crystallized Amorphous Silicon” Fork et al., 1996 American Institute of Physics, pp. 2138-2140.
Appl. Phys. Lett. 68(15) (1996), D.K. Fork et al., p. 2138-2140.
IEEE Transactions on Electron Devices; vol. 42, No. 2 (1995) Atsushi Kohno et al. p. 251-257.
“Improvement of SPC poly-Si Film Using the ELA Method” Aya et al., AM-LCD '97, pp. 167-170.
Characteristics of Laser-Annealed Polycrystalline Silicon Films Mishima et al., The Institute of Electronics, Information and Communication Engineers, Technical Report of IEICE.EID98-19 (Jun. 1998), pp. 67-72.
Kawachi Genshiro
Mimura Akio
Satoh Takeshi
Shinagawa Youmei
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Tran Minh-Loan T
LandOfFree
Method of fabricating a semiconductor thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a semiconductor thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor thin film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3989999