Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-11-22
2008-09-09
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S189200, C365S189090
Reexamination Certificate
active
07423908
ABSTRACT:
A nonvolatile memory device includes an array of memory cells arranged in rows and columns, the array of memory cells having wordlines associated therewith. A wordline voltage controller determines the levels of wordline voltages to be supplied to the respective wordlines and a wordline voltage generator generates the wordline voltages at the determined levels. Related methods are also provided.
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Notice to Files a Response/Amendment to the Examination Report for Korean Application No. 10-2005-0050468; date of mailing Aug. 30, 2006.
English translation of Notice to Files a Response/Amendment to the Examination Report for Korean Application No. 10-2005-0050468; date of mailing Aug. 30, 2006.
Korean Intellectual Property Office Notice to File a Response/Amendment to the Examination Report for Application No. 2004-0095863; Date of mailing May 27, 2006.
English translation of Korean Intellectual Property Office Notice to File a Response/Amendment to the Examination Report for Application No. 2004-0095863; Date of mailing May 27, 2006.
Kim Hyung-Gon
Kim Min-Su
Myers Bigel Sibley & Sajovec P.A.
Pham Ly D
Samsung Electronics Co,. Ltd.
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