Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2007-01-10

2008-10-14

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104, C257SE29164

Reexamination Certificate

active

07436013

ABSTRACT:
A ferroelectric memory device has a high performance, includes no Pb, and can be directly mounted onto an Si substrate. The ferroelectric memory device includes a (001)-oriented BiFeO3ferroelectric layer5with a tetragonal structure, which is formed on an electrode4made of a perovskite material formed on an Si oxide film. The electrode4with a perovskite structure is formed by an ion beam assist method.

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patent: A 2001-210794 (2001-08-01), None
Yun et al, “Prominent ferroelectricity of BiFeO3 . . . deposition”, Applied Physics Letters vol. 83, No. 19 Nov. 10, 2003 pp. 3981-3983.
Wang et al., “Epitaxial BiFeO3Multiferroic Thin Film Heterostructures,” Science, vol. 299, pp. 1719-1722, Mar. 14, 2003.

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