Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2005-12-29
2008-05-27
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S053000, C438S055000, C438S106000, C257SE33056, C257SE23078, C257S710000
Reexamination Certificate
active
07378294
ABSTRACT:
A microdevice (20) having a hermetically sealed cavity (22) to house a microstructure (26). The microdevice (20) comprises a substrate (30), a cap (40), an isolation layer (70), at least one conductive island (60), and an isolation trench (50). The substrate (30) has a top side (32) with a plurality of conductive traces (36) formed thereon. The conductive traces (36) provide electrical connection to the microstructure (26). The cap (40) has a base portion (42) and a sidewall (44). The sidewall (44) extends outwardly from the base portion (42) to define a recess (46) in the cap (40). The isolation layer (70) is attached between the sidewall (44) of the cap (40) and the plurality of conductive traces (36). The conductive island (60) is attached to at least one of the plurality of conductive traces (36). The isolation trench (50) is positioned between the cap (40) and the conductive island (60) and may be unfilled or at least partially filled with an electrically isolating material. There is also a method of making the same microdevice.
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Ding Xiaoyi
Schuster John P.
Singal Ankush K
Smith Matthew
Temic Automotive of North America, Inc.
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