Method for forming barrier film and method for forming...

Details Method for forming barrier film and method for forming... Method for forming barrier film and method for forming...

2006-07-31

2008-09-02

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21170, C257SE21584, C438S680000, C438S685000

Reexamination Certificate

active

07419904

ABSTRACT:
In the present invention, a barrier film20is formed by forming a tungsten nitride film21and subsequently by forming a tungsten silicide film22. The tungsten silicide film22is exposed at the surface of the barrier film20, and an electrode film25′ is formed so as to be brought into close contact with the tungsten silicide film22. Since a conductive material constituting the electrode film25′ is chemically bound to silicon atoms in the tungsten silicide film22, the adhesion between the barrier film20and the electrode film25′ is high, and the electrode film25′ resists peeling from the barrier film20. Further, agglomeration is not likely to occur in the electrode film25′ during annealing.

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