Non-volatile memory device and method for fabricating the same

Details Non-volatile memory device and method for fabricating the same Non-volatile memory device and method for fabricating the same

2005-10-12

2008-09-16

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S199000, C438S201000, C438S257000, C438S581000, C438S630000, C438S649000, C438S651000, C438S682000, C438S721000, C438S755000, C257S315000, C257S316000, C257SE21209, C257SE21422, C257SE21613, C257SE21659, C257SE21685

Reexamination Certificate

active

07425482

ABSTRACT:
A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a plurality of gate structures on a substrate, each gate structure including a first electrode layer for a floating gate; forming a first insulation layer covering the gate structures and active regions located at each side of the gate structures; forming a second electrode layer over the first insulation layer; and forming a plurality of control gates on the active regions located at each side of the gate structures by performing an etch-back process to the second electrode layer.

REFERENCES:
patent: 5414286 (1995-05-01), Yamauchi
patent: 6451652 (2002-09-01), Caywood et al.
patent: 2004/0151028 (2004-08-01), Chih et al.

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