Implantation-less approach to fabricating strained...

Details Implantation-less approach to fabricating strained... Implantation-less approach to fabricating strained...

2005-04-15

2008-03-04

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C483S064000, C483S902000, C257SE21090, C257SE21092, C257SE21461

Reexamination Certificate

active

07338886

ABSTRACT:
A method of fabricating a semiconductor substrate includes forming a buffer layer on the substrate. A Ge containing layer, such as a SiGe is formed over the buffer layer. The buffer layer includes defects at the interface of the substrate and buffer layer. The substrate is oxidized to transform the buffer layer to a buried oxide layer.

REFERENCES:
patent: 6649492 (2003-11-01), Chu et al.
patent: 6653209 (2003-11-01), Yamagata
patent: 6723541 (2004-04-01), Sugii et al.
patent: 2003/0207545 (2003-11-01), Yasukawa
patent: 2005/0003229 (2005-01-01), Bedell et al.

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