Semiconductor substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond

Reexamination Certificate

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C257S782000, C257S787000, C257SE21502, C257SE21129

Reexamination Certificate

active

07427811

ABSTRACT:
A semiconductor wafer having a high degree of thinness and exhibiting an enhanced strength state. A layer of tenacious reinforcement material is disposed over a back side of the wafer while in a rough state from backgrinding without prior, conventional polishing or plasma etching of the back side. The thin layer or film of reinforcement material fills grooves, fractures and scratches in the back side of the wafer, enhances the rigidity of the wafer and provides a planar, smooth, back side surface layer. The reinforcement material counteracts internal stresses of the wafer tending to warp, crack and propagate lattice defects in the wafer. The reinforcement material may also be configured to act as a die attach adhesive, may provide an ionic barrier, and may remain as part of the packaging for semiconductor dice singulated from the wafer.

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Wolf et al. “Silicon Processing for the VLSI Era”, vol. 1: Process Technology, Lattice Press, 1986, pp. 238-239.

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