Structure and method of fabricating FINFET with buried channel

Details Structure and method of fabricating FINFET with buried channel Structure and method of fabricating FINFET with buried channel

2005-10-27

2008-03-25

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S283000, C438S284000, C438S525000, C438S526000, C257S365000, C257S401000

Reexamination Certificate

active

07348225

ABSTRACT:
A method of manufacturing a fin structure comprises forming a first structure of a first material type on a wafer and forming a buried channel of a second material adjacent sidewalls of the first structure. The second material type is different than the first material type. The structure includes a first structure and a buried channel.

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