Process for manufacturing a semiconductor device, a...

Details Process for manufacturing a semiconductor device, a... Process for manufacturing a semiconductor device, a...

2005-10-05

2008-03-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S301000, C438S302000, C438S279000

Reexamination Certificate

active

07348221

ABSTRACT:
A process for manufacturing a semiconductor device, provides that a silicide layer is formed, an amorphous semiconductor layer is applied both to the silicide layer and to an open monocrystalline semiconductor region, adjacent to the silicide layer, and during a subsequent temperature treatment, the amorphous semiconductor layer is crystallized proceeding from the open, monocrystalline semiconductor region, acting as a crystallization nucleus, so that the silicide layer is covered at least partially by a crystallized, monocrystalline semiconductor layer.

REFERENCES:
patent: 5254484 (1993-10-01), Hefner et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5994191 (1999-11-01), Xiang et al.
patent: 6338991 (2002-01-01), Zhang et al.
patent: 2004/0147074 (2004-07-01), Sell et al.
patent: 2006/0071214 (2006-04-01), Bromberger
patent: 40 35 842 (1992-05-01), None
Jeong-Hee Oh et al., “Enhanced Growth Mechanism in Lateral Solid-Phase Epitaxy of Si Films Simultaneously Doped with P and Ge Atoms,” Jpn. J. Appl. Phys. vol. 35 (1996), pp. 1605-1610, Part 1, No. 3, Mar. 1996.
D. Widmann et al., “Technologie hochintegrierter Schaltungen,” 2ndEdition, Springer 1996, ISBN 3-540-59357-8, p. 183.
Denise L. Leung et al., “A Complementary Metal Oxide Semiconductor Process in Epitaxially Regrown Silicon over Oxide,” Journal of the Electrochemical Society, 138 (1991), No. 12, pp. 3771-3777.
A.V. Zotov et al., “Present Status of Solid Phase Epitaxy of Vacuum-Deposited Silicon,” Journal of Crystal Growth, 98 (1989), pp. 519-530.
Masayoshi Sasaki et al., “Lateral solid phase epitaxy of Si over SiO2patterns and its application to silicon-on-insulator transistors,” Applied Physics Letters, 49(7), 1996, pp. 397-399.
K. Kusukawa et al., “Effects of thin SiO2capping layer on silicon-onl-insulator formation by lateral solid-phase epitaxy,” Applied Physics Letters, 60(1), 1992, pp. 80-81.
K. Kusukawa et al., “Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy,” Applied Physics Letters, 52 (20), 1988, pp. 1681-1683.
Hiroshi Ishiwara et al., “Lateral solid phase epitaxy of amorphous Si films and Si substrates with SiO2patterns,” Applied Physics Letters, 43(11), 1983, pp. 1028-1030.
Masahiro Moniwa et al., “Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy,” Applied Physics Letters, 52(21), 1988, pp. 1788-1790.
K. Kusukawa et al., “Enhancement of lateral solid phase epitaxy over SiO2using a densified and thinned amorphous Si layer,” Applied Physics Letters, 56(6), 1990, pp. 560-562.
Hiroshi Ishiwara et al., “Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2patterns on Si substrates,” Applied Physics Letters, 48(12), 1986, pp. 773-775.
Toru Dan et al., “Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of P atoms,” Applied Physics Letters, 53(26), 1988, pp. 2626-2628.
Hiroshi Ishiwara et al., “Lateral solid phase epitaxy in selectively P-doped amorphous Si films,” Applied Physics Letters, 49(20), 1986, pp. 1363-1365.
M. Miyao et al., “Low-temperature SOI(Si-on-insulator)formation by lateral solid-phase epitaxy,” Journal of Applied Physics, 64(6), 1988, pp. 3018-3023.
Hiroshi Ishiwara et al., “Selective Surface Doping Method of P Atoms in Lateral Solid Phase Epitaxy and its Applications to Device Fabrication,” Japanese Journal of Applied Physics, 31, 1992, pp. 1695-1701.

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