Semiconductor device and a method of manufacturing the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S624000

Reexamination Certificate

active

07419901

ABSTRACT:
In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

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patent: 7018917 (2006-03-01), Elers
patent: 7067897 (2006-06-01), Hatano et al.
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patent: 2003-124307 (2003-04-01), None
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patent: 2004-221275 (2004-08-01), None

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