High density stepped, non-planar nitride read only memory

Details High density stepped, non-planar nitride read only memory High density stepped, non-planar nitride read only memory

2006-04-07

2008-09-23

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

C438S129000, C438S589000, C257SE21662

Reexamination Certificate

active

07427536

ABSTRACT:
A non-planar, stepped NROM array is comprised of cells formed in trenches and on pillars that are etched into a substrate. Each cell has a plurality of charge storage regions in its nitride layer and a pair of source/drain regions that are shared with adjacent cells in a column. The source/drain regions, formed in the pillar/trench sidewalls, couple the column cells serially into bitlines. The rows of the array are each coupled by a wordline. A second set of trenches separates the columns of cells.

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