Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-23
2008-07-15
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21546, C257SE29300, C438S257000, C438S593000, C438S424000
Reexamination Certificate
active
07400010
ABSTRACT:
A semiconductor device including a semiconductor substrate having trenches oriented in a predetermined direction; a gate insulating film overlaying the semiconductor substrate interposed between the trenches; and floating gate electrodes formed on the gate insulating film aligned in a predetermined direction and in a direction intersecting thereto, an element isolation insulating film filling the trenches such that an upper surface thereof is higher than an upper surface of the adjoining gate insulating film, wherein the element isolation insulating film includes a first element isolation insulator interposed between neighboring floating gate electrodes in the intersecting direction and a second element isolation insulator interposed between neighboring first element isolation insulators in the predetermined direction. The second element isolation insulator has a sidewall oriented in the predetermined direction, a height thereof from the gate insulating film upper surface being lower than a boundary between the first and the second isolation insulators.
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U.S. Appl. No. 11/438,367, filed May 23, 2006, Matsuno.
U.S. Appl. No. 11/871,591, filed Oct. 12, 2007, Miyazaki.
Kabushiki Kaisha Toshiba
Thomas Toniae M.
Wilczewski M.
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