Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-04
2008-03-11
Andujar, Leonardo (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S107000, C438S612000
Reexamination Certificate
active
07341894
ABSTRACT:
In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.
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Hara Hiroyuki
Kimura Mitsumi
Miyazawa Wakao
Utsunomiya Sumio
Andujar Leonardo
Oliff & Berridg,e PLC
Seiko Epson Corporation
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