Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1999-11-30

2008-03-25

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S181000

Reexamination Certificate

active

07348227

ABSTRACT:
A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

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Office Action dated Jun. 21, 2004 from U.S. Appl. No. 08/433,561 (including copy of pending claims as of Nov. 22, 2004).

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