Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2004-09-02
2008-09-02
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C252S079100
Reexamination Certificate
active
07419910
ABSTRACT:
Disclosed is a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a surfactant, an inorganic particle, and a resin particle containing polystyrene, having on the surface thereof a functional group of the same kind of polarity as that of the inorganic particle and having an average particle diameter of less than 100 nm, the resin particle being incorporated at a concentration of less than 1% by weight.
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People's Republic of China Notification of First Office Action mailed Apr. 28, 2006, and English translation thereof.
Taiwanese Patent Office Notification of First Office Action in co-pending application 093135901 and English language translation thereof, 2006.
Fukushima Dai
Minamihaba Gaku
Yamamoto Susumu
Yano Hiroyuki
Chen Kin-Chan
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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