Phase-shifting mask and method of forming pattern using the...

Details Phase-shifting mask and method of forming pattern using the... Phase-shifting mask and method of forming pattern using the...

2004-08-19

2008-09-02

Huff, Mark F. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S005000, C430S322000, C430S394000

Reexamination Certificate

active

07419767

ABSTRACT:
A phase-shifting mask suppresses increase of the minimum pattern-element size due to optical proximity effect. The mask a first pattern region formed on a transparent substrate, including a first blocking part for forming at least one first pattern element. The mask further includes a second pattern region on the substrate, including second blocking parts forming second pattern elements arranged periodically. The first pattern region includes first phase- and transparent parts. The second pattern region includes second phase-shifting and transparent parts. The intensity of exposing light through the first pattern region is set to be approximately equal to that of the light through the second pattern region. A third blocking part surrounds the first phase-shifting and transparent parts. A fourth blocking part surrounds the second phase-shifting and transparent parts.

REFERENCES:
patent: 5631108 (1997-05-01), Okamoto
patent: 6503666 (2003-01-01), Pierrat
patent: 6566023 (2003-05-01), Wang et al.
patent: 6638663 (2003-10-01), Jin
patent: 62-50811 (1987-10-01), None

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